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| Type IPP114N03L G IPB114N03L G OptiMOS(R)3 Power-Transistor Features * Fast switching MOSFET for SMPS * Optimized technology for DC/DC converters * Qualified according to JEDEC1) for target applications * N-channel, logic level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * Avalanche rated * Pb-free plating; RoHS compliant Type IPP114N03L G IPB114N03L G Product Summary V DS R DS(on),max ID 30 11.4 30 V m A Package Marking PG-TO220-3 114N03L PG-TO263-3 114N03L Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 C V GS=10 V, T C=100 C V GS=4.5 V, T C=25 C V GS=4.5 V, T C=100 C Pulsed drain current2) Avalanche current, single pulse 3) Avalanche energy, single pulse I D,pulse I AS E AS T C=25 C T C=25 C I D=12 A, R GS=25 I D=30 A, V DS=24 V, di /dt =200 A/s, T j,max=175 C Value 30 30 30 26 210 30 30 mJ Unit A Reverse diode dv /dt dv /dt V GS 6 kV/s Gate source voltage 1) 20 V J-STD20 and JESD22 Rev. 1.02 page 1 2007-08-29 IPP114N03L G IPB114N03L G Maximum ratings, at T j=25 C, unless otherwise specified Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Symbol Conditions P tot T j, T stg T C=25 C Value 38 -55 ... 175 55/175/56 Unit W C Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm cooling area 4) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=250 A V DS=30 V, V GS=0 V, T j=25 C V DS=30 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance 5) - - 3.9 62 40 K/W 30 1 - 0.1 2.2 1 V A - 10 10 13.1 9.5 1.2 49 100 100 16.4 11.4 S nA m I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=25 A V GS=10 V, I D=30 A Gate resistance Transconductance 2) 3) 4) RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A 24 See figure 3 for more detailed information See figure 13 for more detailed information Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Measured from drain tab to source pin 5) Rev. 1.02 page 2 2007-08-29 IPP114N03L G IPB114N03L G Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 5) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total Q gs Q g(th) Q gd Q sw Qg V plateau Qg V DD=15 V, I D=30 A, V GS=0 to 10 V V DS=0.1 V, V GS=0 to 4.5 V V DD=15 V, V GS=0 V V DD=15 V, I D=30 A, V GS=0 to 4.5 V 3.7 1.7 1.6 3.6 6.6 3.5 14 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 V GS=0 V, V DS=15 V, f =1 MHz 1100 460 22 3.8 3.0 15 2.4 1500 610 ns pF Gate charge total, sync. FET Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Q g(sync) Q oss - 5.7 12 - nC IS I S,pulse V SD T C=25 C V GS=0 V, I F=30 A, T j=25 C V R=15 V, I F=I S, di F/dt =400 A/s - 0.97 30 210 1.2 A V Reverse recovery charge Q rr - - 10 nC 6) See figure 16 for gate charge parameter definition Rev. 1.02 page 3 2007-08-29 IPP114N03L G IPB114N03L G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS 10 V 50 40 40 30 30 P tot [W] I D [A] 20 10 0 0 50 100 150 200 20 10 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 limited by on-state resistance 1 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 10 102 10 s 0.5 1 0.2 0.1 0.05 0.02 0.01 I D [A] DC 101 1 ms 10 ms Z thJC [K/W] 0.1 100 s 100 single pulse 10-1 10-1 100 101 102 0.01 0 0 0 0 0 0 1 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.02 page 4 2007-08-29 IPP114N03L G IPB114N03L G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 120 10 V 5V 3.2 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 28 24 4.5 V 3.5 V 4V 20 80 4.5 V R DS(on) [m ] 16 I D [A] 4V 12 10 V 11.5 V 5V 40 8 3.5 V 3.2 V 3V 2.8 V 4 0 0 1 2 3 0 0 20 40 60 80 100 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 90 80 70 8 Typ. forward transconductance g fs=f(I D); T j=25 C 80 60 60 50 40 30 20 10 0 0 1 2 3 4 5 175 C 25 C g fs [S] I D [A] 40 20 0 0 20 40 60 80 100 V GS [V] I D [A] Rev. 1.02 page 5 2007-08-29 IPP114N03L G IPB114N03L G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=30 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=250 A 20 2.5 16 2 98 % R DS(on) [m ] 12 typ 8 V GS(th) [V] 100 140 180 1.5 1 4 0.5 0 -60 -20 20 60 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 1000 25 C 10 3 Ciss 25 C, 98% 100 Coss C [pF] I F [A] 102 175 C, 98% Crss 10 10 1 175 C 100 0 10 20 30 1 0.0 0.5 1.0 1.5 2.0 V DS [V] V SD [V] Rev. 1.02 page 6 2007-08-29 IPP114N03L G IPB114N03L G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=30 A pulsed parameter: V DD 12 15 V 6V 10 24 V 25 C 8 10 150 C 100 C V GS [V] 102 103 I AV [A] 6 4 2 1 10-1 100 101 0 0 5 10 15 20 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 34 V GS 32 Qg 30 V BR(DSS) [V] 28 26 V g s(th) 24 22 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 20 T j [C] Rev. 1.02 page 7 2007-08-29 IPP114N03L G IPB114N03L G Package Outline PG-TO220-3 Rev. 1.02 page 8 2007-08-29 IPP114N03L G IPB114N03L G Package Outline PG-TO263-3 Rev. 1.02 page 9 2007-08-29 IPP114N03L G IPB114N03L G Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2007. All Rights Reserved. Legal disclaimer The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.02 page 10 2007-08-29 |
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